5ln01sp no.6559-1/10 features ? low on-resistance ? ultrahigh-speed switching ? 2.5v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 50 v gate-to-source voltage v gss 10 v drain current (dc) i d 0.1 a drain current (pulse) i dp pw 10 s, duty cycle 1% 0.4 a allowable power dissipation p d 0.25 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7524-007 ordering number : en6559a n2112 tkim/82200 ts im ta-2046 http://www.sanyosemi.com/en/network/ sanyo semiconductors data sheet 1 2 3 5ln01sp n-channel silicon mosfet ultrahigh-speed switching applications product & package information ? package : spa ? jeita, jedec : sc-72 ? minimum packing quantity : 2,500 pcs./box, 500 pcs./bag marking electrical connection 123 4.0 3.8 3.0 2.2 0.7 0.7 0.6 0.4 0.4 0.4 0.5 3.0 1.8 15.0 1.3 1.3 1 : source 2 : drain 3 : gate sanyo : spa yb lot no. 5ln01sp 5ln01sp-ac
5ln01sp no.6559-2/10 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 50 v zero-gate voltage drain current i dss v ds =50v, v gs =0v 10 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =50ma 0.13 0.18 s static drain-to-source on-state resistance r ds (on)1 i d =50ma, v gs =4v 6 7.8 r ds (on)2 i d =30ma, v gs =2.5v 7.1 9.9 r ds (on)3 i d =10ma, v gs =1.5v 10 20 input capacitance ciss v ds =10v, f=1mhz 6.6 pf output capacitance coss 4.7 pf reverse transfer capacitance crss 1.7 pf turn-on delay time t d (on) see speci ed test circuit. 18 ns rise time t r 42 ns turn-off delay time t d (off) 190 ns fall time t f 105 ns total gate charge qg v ds =10v, v gs =10v, i d =100ma 1.57 nc gate-to-source charge qgs 0.20 nc gate-to-drain ?miller? charge qgd 0.32 nc diode forward voltage v sd i s =100ma, v gs =0v 0.85 1.2 v switching time test circuit ordering information device package shipping memo 5ln01sp spa 500pcs./bag pb free 5ln01sp-ac spa 2,500pcs./box pw=10 s d.c. 1% 4v 0v v in p. g 50 g s d i d =50ma r l =500 v dd =25v v out 5ln01sp v in
5ln01sp no.6559-3/10 static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- 0 0 0.02 0.01 0.04 0.03 0.06 0.05 0.08 0.07 0.2 0.10 0.09 0.4 0.6 0.8 1.0 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 3.5v 6.0v 2.0v 2.5v 4.0v 3.0v 0 0.5 1.0 1.5 2.0 3.0 2.5 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a v ds =10v ta= --25 c 75 c 25 c 012 6 7 8 9 10 11 12 34 5 6 2 3 4 5 78910 gate-to-source voltage, v gs -- v r ds (on) -- v gs ta=25 c drain current, i d -- a r ds (on) -- i d it00054 it00055 it00056 it00057 v gs =1.5v i d =30ma 50ma 1.0 0.01 0.1 23 57 23 10 7 5 3 2 100 7 5 3 2 --25 c 25 c ta=75 c v gs =4v 1.0 0.001 0.01 23 57 23 10 7 5 3 2 100 7 5 3 2 --25 c ta=75 c 25 c 1.0 0.01 0.1 23 57 23 10 7 5 3 2 100 7 5 3 2 --25 c ta=75 c 25 c static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- --60 0 2 4 6 8 10 12 14 --40 --20 0 20 40 60 80 100 120 140 160 ambient temperature, ta -- c r ds (on) -- ta i d =30ma, v gs =2.5v i d =50ma, v gs =4.0v drain current, i d -- a it00060 it00061 drain current, i d -- a r ds (on) -- i d v gs =2.5v drain current, i d -- a r ds (on) -- i d v gs =1.5v it00058 it00059 0.01 0.01 0.1 23 57 23 1.0 0.1 7 5 3 2 7 5 3 2 ta= --25 c 25 c 75 c v ds =10v | y fs | -- i d forward transfer admittance, | y fs | -- s
5ln01sp no.6559-4/10 0.5 0.6 0.7 0.8 0.9 1.0 1.1 3 0.01 0.1 3 2 7 5 2 i f -- v sd v gs =0 25 c --25 c ta=75 c diode forward voltage, v sd -- v forward current, i f -- a i f -- v sd 05 10 10 15 100 7 5 3 2 7 5 3 2 1.0 20 25 30 35 40 45 50 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf ciss coss crss f=1mhz 0.01 10 0.1 23 57 1000 100 7 5 3 2 7 5 3 2 drain current, i d -- a sw time -- i d switching time, sw time -- ns v dd =25v v gs =4v t d (off) t d (on) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 4 5 6 7 8 9 10 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v v ds =10v i d =100ma it00062 it00063 it00064 it00065 t r t f 0 20 40 60 100 120 140 0 80 0.3 0.25 0.2 0.05 0.1 0.15 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it02005
5ln01sp no.6559-5/10 taping speci cation 5ln01sp-ac
5ln01sp no.6559-6/10
5ln01sp no.6559-7/10 outline drawing 5ln01sp-ac mass (g) unit 0.13 * for reference mm
5ln01sp no.6559-8/10 bag packing speci cation 5ln01sp
5ln01sp no.6559-9/10 outline drawing 5ln01sp mass (g) unit 0.13 * for reference mm
5ln01sp no.6559-10/10 ps this catalog provides information as of november, 2012. speci cations and information herein are subject to change without notice. note on usage : since the 5ln01sp is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
|
